Mosfet

RM50N06PA Silicon N-Channel Power MOSFET description: This MOSFETs from Rongtech Industry(ShangHai) Inc.,. Advanced 6 inch technology to achieve extremely low Static Drain-to-Source on-Resistance RDS(on). For this reason, This MOSFET has low energy consumption during application which also enhances reliability and durability.

RM45N06PA Silicon N-Channel Power MOSFET description: This MOSFETs from Rongtech Industry(ShangHai) Inc.,. Advanced 6 inch technology to achieve extremely low Static Drain-to-Source on-Resistance RDS(on). For this reason, This MOSFET has low energy consumption during application which also enhances reliability and durability.

RM30N20PK Silicon N-Channel Power MOSFET description：This MOSFETs from Rongtech Industry(ShangHai) Inc.,. Advanced 6 inch technology to achieve extremely low Static Drain-to-Source on-Resistance RDS(on). For this reason, This MOSFETs has low energy consumption during application which also enhances reliability and durability.

RM40N10PA Silicon N-Channel Power MOSFET description：This MOSFETs from Rongtech Industry(ShangHai) Inc.,. Advanced 6 inch technology to achieve extremely low Static Drain-to-Source on-Resistance RDS(on). For this reason, This MOSFET has low energy consumption during application which also enhances reliability and durability.

RM40N10PK Silicon N-Channel Power MOSFET description：This MOSFETs from Rongtech Industry(ShangHai) Inc., Advanced 6 inch technology to achieve extremely low Static Drain-to-Source on-Resistance RDS(on). For this reason, This MOSFETs has low energy consumption during application which also enhances reliability and durability.

This MOSFETs from Rongtech Industry(ShangHai) Inc., . Advanced 6 inch technology to achieve extremely low Static Drain-to-Source on-Resistance RDS(on). For this reason, This MOSFET has low energy consumption during application which also enhances reliability and durability.

RVS35N60PN is an -channel enhancement mode high voltage power MOSFET produced using Rongtech DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it's universal applicable, i.e., suitable for hard and soft switching topologies.

RVS24N60F/PT is an N-channel enhancement mode high voltage power MOSFETs produced using the new platform of Rongtech Mos technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it's universal applicable, i.e., suitable for hard and soft switching topologies.

RVS20N65F/S/PN is an N-channel enhancement mode high voltage power MOSFETs produced using Rongtech's DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it's universal applicable, i.e., suitable for hard and soft switching topologies.