Mosfet

RVS47N60P/PT is an -channel enhancement mode high voltage power MOSFETs produced using the new platform of Rongtech Mos technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it's universal applicable, i.e., suitable for hard and soft switching topologies.

RVF3878PN is an N-channel enhancement mode power MOS field effect transistor which's produced use Rongtec proprietary F-Cell™M structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PM motor drivers.

RVF4N90F/MJ is an N-channel enhancement mode power MOS field effect transistor which's produced use Rongtec proprietary F-Cell' structure VDMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PM motor drivers.

The RVT10180NT/D is an N-channel enhancement mode power MOS field effect transistor which is produced using RongteLVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in the fields of uninterruptible power supplies and power management of inverter systems.

RM110N06PK Silicon N-Channel Power MOSFET description: This MOSFETs from Rongtech Industry(ShangHai) Inc., . Advanced 6 inch technology to achieve extremely low Static Drain-to-Source on-Resistance RDS(on). For this reason, This MOSFETs has low energy consumption during application which also enhances reliability and durability.

RM110N06PA Silicon N-Channel Power MOSFET description: This MOSFETs fromRongtech Industry(ShangHai) Inc., Advanced 6 inch technology to achieve extremely low Static Drain-to-Source on-Resistance RDS(on). For this reason, This MOSFET has low energy consumption during application which also enhances reliability and durability.

RM75N08PA Silicon N-Channel Power MOSFET description: This MOSFETs from Rongtech Industry(ShangHai) Inc.,. Advanced 6 inch technology to achieve extremely low Static Drain-to-Source on-Resistance RDS(on). For this reason, This MOSFETs has low energy consumption during application which also enhances reliability and durability.

RM70N06PA Silicon N-Channel Power MOSFET description: This MOSFETs from Rongtech Industry(ShangHai) Inc.,. Advanced 6 inch technology to achieve extremely low Static Drain-to-Source on-Resistance RDS(on). For this reason, This MOSFET has low energy consumption during application which also enhances reliability and durability.

RM60N10PA Silicon N-Channel Power MOSFET description: This MOSFETs from Rongtech Industry(Shang Hai) Inc.,. Advanced 6 inch technology to achieve extremely low Static Drain-to-Source on-Resistance RDS(on). For this reason, This MOSFET has low energy consumption during application which also enhances reliability and durability.