RVS24N60F/PT Datasheet 24A, 600V DP MOS POWER TRANSISTOR
RVS24N60F/PT Datasheet 24A, 600V DP MOS POWER TRANSISTOR
- Rongtech
- China
- 7days
- 30000
RVS24N60F/PT is an N-channel enhancement mode high voltage power MOSFETs produced using the new platform of Rongtech Mos technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it's universal applicable, i.e., suitable for hard and soft switching topologies.
RVS24N60F/PT Datasheet 24A, 600V DP MOS POWER TRANSISTOR FEATURES
24A, 600V
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
High peak current capability
RVS24N60F/PT Datasheet 24A, 600V DP MOS POWER TRANSISTOR data
