RVS35N60PN Datasheet 35A, 600V DP MOS POWER TRANSISTOR
RVS35N60PN Datasheet 35A, 600V DP MOS POWER TRANSISTOR
- Rongtech
- China
- 7days
- 30000
RVS35N60PN is an -channel enhancement mode high voltage power MOSFET produced using Rongtech DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it's universal applicable, i.e., suitable for hard and soft switching topologies.
RVS35N60PN Datasheet 35A, 600V DP MOS POWER TRANSISTOR FEATURES
1. 35A, 600V,
2. New revolutionary high voltage technology
3. Ultra low gate charge
4. Periodic avalanche rated
5. Extreme dv/dt rated
6. High peak current capability
RVS35N60PN Datasheet 35A, 600V DP MOS POWER TRANSISTOR data
