RVS20N65F/S/PN Datasheet 20A, 650V DP MOS POWER TRANSISTOR
RVS20N65F/S/PN Datasheet 20A, 650V DP MOS POWER TRANSISTOR
- Rongtech
- China
- 7days
- 30000
RVS20N65F/S/PN is an N-channel enhancement mode high voltage power MOSFETs produced using Rongtech's DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it's universal applicable, i.e., suitable for hard and soft switching topologies.
RVS20N65F/S/PN Datasheet 20A, 650V DP MOS POWER TRANSISTOR Features
1. 20A, 650V
2. New revolutionary high voltage technology
3. Ultra low gate charge
4. Periodic avalanche rated
5. Extreme dv/dt rated
6. High peak current capability
RVS20N65F/S/PN Datasheet 20A, 650V DP MOS POWER TRANSISTOR data
