SiC & GaN

RTQ12050T4 Features:High blocking voltage with low on -resistance, High speed switching with low capacitance, High operating junction temperature capability, Very fast and robust intrinsic body diode, Kelvin gate input easing driver circuit design.

RSC200FF120C8NS-S17 SiC MOSFET Module  Features:Automotive qualified base on AEC Q101,  Ultra low loss, High-frequency operation, Zero turn-off tail current from MOSFET, Normally-off, fail-safe device operation, Easy of paralleling, Low stray inductance, >4kV DC 1 sec insulation, Direct cooled pinfin base plate, Toughened DBC substrates for superior reliability, Integrated NTC temperature sensor, Press fit signal terminals, UL 94 V0 module frame, Lead Free, Compliant with RoHS Requirement.

RT4AGP907 and RTAGECP910 are Aluminum Gallium Arsenide (AlGaAs) flip-chip PIN diodes. These devices are fabricated on OMCVD epitaxial wafers using a process optimized for high device uniformity and exceptionally low parasitics. The end result is a diode with an extremely low RC
product. (0.1ps) and 2_3nS switching characteristics. They are fully passivated with silicon nitride and have an added polvmer laver for scratch protection. The protective coating prevents damage to the junction and the anode air-bridge during handling and assembly.

RTS120010 Features: Zero reverse recover current, Zero forward recovery voltage, Temperature independent switching behavior, High temperature operation, High frequency operation.

RTS12008 Features: Zero reverse recovery current, Zero forward recovery voltage, Temperature independent switching behavior, High temperature operation, High frequency operation.

RTCR1401 driver represents InventChip's cutting-edge single channel low-side high-speed gate driver technology development. It features built-in negative voltage generation, desaturation/short-circuit protection, programmable UVLO. This driver offers the best-in-class characteristics and the most compact and reliable SiC MOSFET gate driving control. It is the first industry driver equipped with all necessary SiC MOSFET gate driving features in a SOIC-8 package.

RTM080120B Features:High Blocking Voltage with Low O-Resistance, High Speed Switching with Low Capactiances, Easy to parallel and simple to drive, Avanche Ruggedness.

RTQ12080T3 30000 特点：高压、低导通电阻; 高速、寄生电容小; 高工作结温; 快速恢复体二极管.

RTS06504 Features: Zero reverse recovery current, Zero forward recovery voltage, Temperature independent switching behavior, High temperature operation, High frequency operation.