RT4AGP907 FCP910 SiC GaN Power Module
RT4AGP907 FCP910 SiC GaN Power Module is positioned for high efficiency switching and power conversion applications. Wide bandgap semiconductor technology supports fast response, low loss performance and compact power electronics design for converters, power supplies, charging systems and industrial equipment.
RT4AGP907 FCP910 SiC GaN Power Module technical overview
RT4AGP907 FCP910 SiC GaN Power Module is organized for buyers comparing SiC & GaN for power electronics, industrial automation, renewable energy, UPS, motor drive, and control system projects. Review the existing features, specifications, and product images below, then compare related Rongtech Power components for compatible sourcing options.
RT4AGP907_FCP910 Features:
1. Low Series Resistance
2. Ultra Low Capacitance
3. Millimeter Wave Switching & Cutoff Frequency
4. 2 Nanosecond Switching Speed
5. Can be Driven by a Buffered TTL
6. Silicon Nitride Passivation
7. Polvimide Scratch Protection
8. RoHS Compliant
RT4AGP907_FCP910 data
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