RVF4N90F/MJ_ Datasheet 4A, 900V N CHANNEL MOSFET
RVF4N90F/MJ_ Datasheet 4A, 900V N CHANNEL MOSFET
- Rongtech
- China
- 7days
- 30000
RVF4N90F/MJ is an N-channel enhancement mode power MOS field effect transistor which's produced use Rongtec proprietary F-Cell' structure VDMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PM motor drivers.
RVF4N90F/MJ_ Datasheet 4A, 900V N CHANNEL MOSFET FEATURES
1. 4A, 900V
2. Low gate charge
3. Low Crss
4. Fast switching
5. Improved dv/dt capability
RVF4N90F/MJ_ Datasheet 4A, 900V N CHANNEL MOSFET data
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