RVS47N60PN/PT Datasheet 47A, 600V DP MOS POWER TRANSISTOR

  • RVS47N60PN/PT Datasheet 47A, 600V DP MOS POWER TRANSISTOR
RVS47N60PN/PT Datasheet 47A, 600V DP MOS POWER TRANSISTOR
  • Rongtech
  • China
  • 7days
  • 30000

RVS47N60P/PT is an -channel enhancement mode high voltage power MOSFETs produced using the new platform of Rongtech Mos technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it's universal applicable, i.e., suitable for hard and soft switching topologies.

RVS47N60PN/PT Datasheet 47A, 600V DP MOS POWER TRANSISTOR  FEATURES

1. 47A, 600V

2. New revolutionary high voltage technology

3. Ultra low gate charge

4. Periodic avalanche rated

5. Extreme dv/dt rated

6. High peak current capability

RVS47N60PN/PT Datasheet 47A, 600V DP MOS POWER TRANSISTOR data

RVS47N60PN/PT Datasheet 47A

 600V DP MOS POWER TRANSISTOR

RVS47N60PN/PT Datasheet 47A

 600V DP MOS POWER TRANSISTOR

RVS47N60PN/PT Datasheet 47A

 600V DP MOS POWER TRANSISTOR


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