RTCR1401 SiC GaN Power Semiconductor
RTCR1401 SiC GaN Power Semiconductor is positioned for wide bandgap power conversion applications requiring fast switching and compact design. It supports industrial power supplies, converters, charging systems and control modules where SiC or GaN technology helps improve efficiency and thermal performance.
RTCR1401 SiC GaN Power Semiconductor technical overview
RTCR1401 SiC GaN Power Semiconductor is organized for buyers comparing SiC & GaN for power electronics, industrial automation, renewable energy, UPS, motor drive, and control system projects. Review the existing features, specifications, and product images below, then compare related Rongtech Power components for compatible sourcing options.
RTCR1401 Description:
Logic input
5V/10mA output for external circuit
Open collector fault output, pulled to low when over current or UVLO is detected. External pull-up resistor can be used for UVLO threshold programming
Desaturation detection input
Positive bias supply
Gate driver output
Driver ground
Negative voltage output
Bottom exposed pad is often tied to GND on lavout. SOIC-8 (EP) only
RTCR1401 data
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