rt4agp907_fcp910
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RT4AGP907_FCP910
RT4AGP907 and RTAGECP910 are Aluminum Gallium Arsenide (AlGaAs) flip-chip PIN diodes. These devices are fabricated on OMCVD epitaxial wafers using a process optimized for high device uniformity and exceptionally low parasitics. The end result is a diode with an extremely low RC
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product. (0.1ps) and 2_3nS switching characteristics. They are fully passivated with silicon nitride and have an added polvmer laver for scratch protection. The protective coating prevents damage to the junction and the anode air-bridge during handling and assembly.
