SiC & GaN

RTS12005 Features: Zero reverse recovery current, Zero forward recovery voltage, Temperature independent switching behavior, High temperature operation, High frequency operation.

RTS06506 Features: Zero reverse recovery current, Zero forward recovery voltage, Temperature independent switching behavior, High temperature operation, High frequency operation.

RTS06508 Features: Zero reverse recovery current, Zero forward recovery voltage, Temperature independent switching behavior, High temperature operation, High frequency operation.

RSC300L65A8H-S09 SiC MOSFET Module Features:Ultra Low Loss, High-Frequency Operation, Fast Reverse Recovery, Zero Turn-off Tail Current from MOSFET , Normally-off, Fail-safe Device Operation,  Easy of Paralleling, Press Fit Signal Pins, NTC Temperature Sensor Inside, Lead Free, Compliant with RoHS Requirement.

RT1D12020T3 - 1200V 20A SiC Schottky Diode Features:Max Junction Temperature 175°C, High Surge Current Capacity, Zero Reverse Recovery Current, Zero Forward Recovery Voltage, High-Frequency Operation, Temperature independent switching behavior, Positive Temperature Coefficient on Vf.

RT1D12010T2 - 1200V 10A SiC Schottky Diode Features:Max Junction Temperature 175°C, High Surge Current Capacity, Zero Reverse Recovery Current, Zero Forward Recovery Voltage, High-Frequency Operation, Temperature independent switching behavior, Positive Temperature Coefficient on Vf.

RT1D12010BC - 1200V 10A Silicon Carbide Schottky Diode Chip Features:
• Max Junction Temperature 175°C
• High Surge Current Capacity
• Zero Reverse Recovery Current
• Zero Forward Recovery Voltage
• High-Frequency Operation
• Temperature independent switching behavior
• Positive Temperature Coefficient on Vf

RSC150TL65B9H-S09 SiC MOSFET Module Features:Ultra Low Loss, High-Frequency Operation, Fast Reverse Recovery, Zero Turn-off Tail Current from MOSFET , Normally-off, Fail-safe Device Operation,  Easy of Paralleling, Press Fit Signal Pins, NTC Temperature Sensor Inside, Lead Free, Compliant with RoHS Requirement.

RSC200L65A8H-S09 SiC MOSFET Module Features: Ultra Low Loss, High-Frequency Operation, Fast Reverse Recovery, Zero Turn-off Tail Current from MOSFET, Normally-off, Fail-safe Device Operation,  Easy of Paralleling, Press Fit Signal Pins, NTC Temperature Sensor Inside, Lead Free, Compliant with RoHS Requirement.