SiC & GaN

RSC200L65A8H-S09 SiC MOSFET Module is designed for high efficiency power conversion and switching applications. Silicon carbide module technology supports low loss operation, fast response and stable thermal behavior for industrial inverters, motor drives, charging equipment, converters and power supply systems requiring dependable semiconductor performance.

RSC150TL65B9H-S09 SiC MOSFET Module is designed for high efficiency power conversion and switching applications. Silicon carbide module technology supports low loss operation, fast response and stable thermal behavior for industrial inverters, motor drives, charging equipment, converters and power supply systems requiring dependable semiconductor performance.

RT1D12010BC 1200V 10A Silicon Carbide Schottky Diode Chip is used for high efficiency rectification and fast switching in power electronics systems. Silicon carbide diode technology supports low reverse recovery, low loss behavior and stable thermal performance for converters, chargers, inverters, power supplies and industrial equipment.

RT1D12010T2 1200V 10A SiC Schottky Diode is used for high efficiency rectification and fast switching in power electronics systems. Silicon carbide diode technology supports low reverse recovery, low loss behavior and stable thermal performance for converters, chargers, inverters, power supplies and industrial equipment.

RT1D12020T3 1200V 20A SiC Schottky Diode is used for high efficiency rectification and fast switching in power electronics systems. Silicon carbide diode technology supports low reverse recovery, low loss behavior and stable thermal performance for converters, chargers, inverters, power supplies and industrial equipment.

RSC300L65A8H-S09 SiC MOSFET Module is designed for high current and high efficiency power conversion systems. It supports reliable switching, low loss operation and thermal stability for industrial inverters, motor drives, charging equipment, converters and power supply applications. It is suitable for OEM power designs that need clear device selection, efficient thermal behavior and reliable supply for repeated industrial production.

RTM080120B SiC MOSFET Module is designed for high performance switching in industrial power electronics. It supports low loss operation, fast response and reliable thermal behavior for inverters, converters, motor drives, charging equipment and power supply systems. It is suitable for OEM power designs that need clear device selection, efficient thermal behavior and reliable supply for repeated industrial production.

RTCR1401 SiC GaN Power Semiconductor is positioned for wide bandgap power conversion applications requiring fast switching and compact design. It supports industrial power supplies, converters, charging systems and control modules where SiC or GaN technology helps improve efficiency and thermal performance.

RT4AGP907 FCP910 SiC GaN Power Module is positioned for high efficiency switching and power conversion applications. Wide bandgap semiconductor technology supports fast response, low loss performance and compact power electronics design for converters, power supplies, charging systems and industrial equipment.