RT1D12020T3 - 1200V 20A SiC Schottky Diode
RT1D12020T3 - 1200V 20A SiC Schottky Diode
- Rongtech
- china
- 7days
- 30000
RT1D12020T3 - 1200V 20A SiC Schottky Diode Features:Max Junction Temperature 175°C, High Surge Current Capacity, Zero Reverse Recovery Current, Zero Forward Recovery Voltage, High-Frequency Operation, Temperature independent switching behavior, Positive Temperature Coefficient on Vf.
RT1D12020T3 - 1200V 20A SiC Schottky Diode Applications:
1. Solar Power Boost
2. Inverter Free Wheeling Diodes
3. Vienna 3-Phase PFC
4. AC/DC Converters
5. Switch Mode Power Supplies
RT1D12020T3 - 1200V 20A SiC Schottky Diode data
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