RT1D12010BC - 1200V 10A Silicon Carbide Schottky Diode Chip
RT1D12010BC - 1200V 10A Silicon Carbide Schottky Diode Chip
- Rongtech
- china
- 7days
- 30000
RT1D12010BC - 1200V 10A Silicon Carbide Schottky Diode Chip Features:
• Max Junction Temperature 175°C
• High Surge Current Capacity
• Zero Reverse Recovery Current
• Zero Forward Recovery Voltage
• High-Frequency Operation
• Temperature independent switching behavior
• Positive Temperature Coefficient on Vf
RT1D12010BC - 1200V 10A Silicon Carbide Schottky Diode Chip Applications:
1. Solar Power Boost
2. Inverter Free Wheeling Diodes
3. Vienna 3-Phase PFC
4. AC/DC Converters
5. Switch Mode Power Supplie
RT1D12010BC - 1200V 10A Silicon Carbide Schottky Diode Chip data
